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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit SPI Serial Flash
SST25VF512 / SST25VF010 / SST25VF020 / SST25VF040
SST25VF512 / 010 / 020 / 040512Kb / 1Mb / 2Mb / 4Mb Serial Peripheral Interface (SPI) flash memory
Advance Information
FEATURES:
* Single 2.7-3.6V Read and Write Operations * Serial Interface Architecture - SPI Compatible: Mode 0 and Mode 3 * 20 MHz Max Clock Frequency * Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention * Low Power Consumption: - Active Read Current: 7 mA (typical) - Standby Current: 8 A (typical) * Flexible Erase Capability - Uniform 4 KByte sectors - Uniform 32 KByte overlay blocks * Fast Erase and Byte-Program: - Chip-Erase Time: 70 ms (typical) - Sector- or Block-Erase Time: 18 ms (typical) - Byte-Program Time: 14 s (typical) * Auto Address Increment (AAI) Programming - Decrease total chip programming time over Byte-Program operations - Chip Programming Time (typical): SST25VF512: 2 seconds SST25VF010: 3 seconds SST25VF020: 5 seconds SST25VF040: 9 seconds * End-of-Write Detection - Software Status * Hold Pin (HOLD#) - Suspends a serial sequence to the memory without deselecting the device * Write Protection (WP#) - Enables/Disables the Lock-Down function of the status register * Software Write Protection - Write protection through Block-Protection bits in status register * Packages Available - 8-lead SOIC (4.9mm x 6mm) (SST25VF512/010/020 only) - 8-contact WSON
PRODUCT DESCRIPTION
SST's serial flash family features a four-wire, SPI-compatible interface that allows for a low pin count package occupying less board space and ultimately lowering total system costs. SST25VFxxx SPI serial flash memories are manufactured with SST's proprietary, high performance CMOS SuperFlash Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST25VFxxx devices significantly improve performance and reliability, while lowering power consumption. The SST25VFxxx devices write (Program or Erase) with a single 2.7-3.6V power supply. It uses less energy during Erase and Program operations than alternative flash memory technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST25VF512/010/020 devices are offered in an 8-lead SOIC package. All densities are offered in the 8-contact WSON package. See Figure 1 for the pin assignments.
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The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice.
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit SPI Serial Flash SST25VF512 / SST25VF010 / SST25VF020 / SST25VF040
Advance Information
FUNCTIONAL BLOCK DIAGRAM
Address Buffers and Latches
X - Decoder
SuperFlash Memory
Y - Decoder
Control Logic
I/O Buffers and Data Latches
Serial Interface
539 ILL B1.4
CE#
SCK
SI
SO
WP#
HOLD#
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit SPI Serial Flash SST25VF512 / SST25VF010 / SST25VF020 / SST25VF040
Advance Information
PIN DESCRIPTION
CE# SO WP# VSS
1 2
8 7
VDD HOLD# SCK SI
CE# SO WP# VSS
1
8
VDD HOLD# SCK SI
2
7
Top View
3 4 6 5
3
Top View
6
4
5
539 08-soic ILL P01.4
539 08-wson ILL P01a.6
8-LEAD SOIC (SST25VF512/010/020 only) FIGURE 1: PIN ASSIGNMENTS TABLE 1: PIN DESCRIPTION
Symbol Pin Name SCK Serial Clock Functions
8-CONTACT WSON
To provide the timing of the serial interface. Commands, addresses, or input data are latched on the rising edge of the clock input, while output data is shifted out on the falling edge of the clock input. To transfer commands, addresses, or data serially into the device. Inputs are latched on the rising edge of the serial clock. To transfer data serially out of the device. Data is shifted out on the falling edge of the serial clock. The device is enabled by a high to low transition on CE#. CE# must remain low for the duration of any command sequence. The Write Protect (WP#) pin is used to enable/disable BPL bit in the status register. To temporarily stop serial communication with SPI Flash memory without resetting the device. To provide power supply (2.7-3.6V).
T1.7 539
SI SO CE# WP# HOLD# VDD VSS
Serial Data Input Serial Data Output Chip Enable Write Protect Hold Power Supply Ground
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit SPI Serial Flash SST25VF512 / SST25VF010 / SST25VF020 / SST25VF040
Advance Information
CE#
MODE 3 SCK SI MODE 0 Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 DON'T CARE
MODE 3 MODE 0
SO
HIGH-Z
Bit 7
Bit 6
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
539 ILL F34.4
FIGURE 2: SPI PROTOCOL
PRODUCT IDENTIFICATION
TABLE 2: PRODUCT IDENTIFICATION
Address Manufacturer's ID Device ID SST25VF512 SST25VF010 SST25VF020 SST25VF040 00001H 00001H 00001H 00001H 48H 49H 43H 44H
T2.3 539
DEVICE OPERATION
The SST25VFxxx is accessed through the SPI (Serial Peripheral Interface) bus compatible protocol. The SPI bus consist of four control lines; Chip Enable (CE#) is used to select the device, and data is accessed through the Serial Data Input (SI), Serial Data Output (SO), and Serial Clock (SCK). The SST25VFxxx supports both Mode 0 (0,0) and Mode 3 (1,1) of SPI bus operations. The difference between the two modes, as shown in Figure 2, is the state of the SCK signal when the bus master is in Stand-by mode and no data is being transferred. The SCK signal is low for Mode 0 and SCK signal is high for Mode 3. For both modes, the Serial Data In (SI) is sampled at the rising edge of the SCK clock signal and the Serial Data Output (SO) is driven after the falling edge of the SCK clock signal.
Data BFH
00000H
MEMORY ORGANIZATION
The SST25VFxxx SuperFlash memory array is organized in 4 KByte sectors with 32 KByte overlay blocks.
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit SPI Serial Flash SST25VF512 / SST25VF010 / SST25VF020 / SST25VF040
Advance Information
Hold Operation
HOLD# pin is used to pause a serial sequence underway with the SPI Flash memory without resetting the clocking sequence. To activate the HOLD# mode, CE# must be in active low state. The HOLD# mode begins when the SCK active low state coincides with the falling edge of the HOLD# signal. The HOLD mode ends when the HOLD# signal's rising edge coincides with the SCK active low state. If the falling edge of the HOLD# signal does not coincide with the SCK active low state, then the device enters Hold mode when the SCK next reaches the active low state. Similarly, if the rising edge of the HOLD# signal does not coincide with the SCK active low state, then the device exits in Hold mode when the SCK next reaches the active low state. See Figure 3 for Hold Condition waveform. Once the device enters Hold mode, SO will be in highimpedance state while SI and SCK can be VIL or VIH. If CE# is driven active high during a Hold condition, it resets the internal logic of the device. As long as HOLD# signal is low, the memory remains in the Hold condition. To resume communication with the device, HOLD# must be driven active high, and CE# must be driven active low. See Figure 17 for Hold timing.
SCK
HOLD# Active Hold Active Hold Active
539 ILL F44.0
FIGURE 3: HOLD CONDITION WAVEFORM
Write Protection
SST25VFxxx provides software Write protection. The Write Protect pin (WP#) enables or disables the lock-down function of the status register. The Block-Protection bits (BP1, BP0, and BPL) in the status register provide Write protection to the memory array and the status register. See Table 5 for Block-Protection description. Write Protect Pin (WP#) The Write Protect (WP#) pin enables the lock-down function of the BPL bit (bit 7) in the status register. When WP# is driven low, the execution of the Write-Status-Register (WRSR) instruction is determined by the value of the BPL bit (see Table 3). When WP# is high, the lock-down function of the BPL bit is disabled.
TABLE 3: CONDITIONS TO EXECUTE WRITE-STATUSREGISTER (WRSR) INSTRUCTION
WP# L L H BPL 1 0 X Execute WRSR Instruction Not Allowed Allowed Allowed
T3.0 539
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit SPI Serial Flash SST25VF512 / SST25VF010 / SST25VF020 / SST25VF040
Advance Information
Status Register
The software status register provides status on whether the flash memory array is available for any Read or Write operation, whether the device is Write enabled, and the state of the memory Write protection. During an internal Erase or TABLE 4: SOFTWARE STATUS REGISTER
Bit 0 1 2 3 4:5 6 Name BUSY WEL BP0 BP1 RES AAI Function 1 = Internal Write operation is in progress 0 = No internal Write operation is in progress 1 = Device is memory Write enabled 0 = Device is not memory Write enabled Indicate current level of block write protection (See Table 5) Indicate current level of block write protection (See Table 5) Reserved for future use Auto Address Increment Programming status 1 = AAI programming mode 0 = Byte-Program mode 1 = BP1, BP0 are read-only bits 0 = BP1, BP0 are read/writable Default at Power-up 0 0 1 1 0 0 Read/Write R R R/W R/W N/A R
Program operation, the status register may be read only to determine the completion of an operation in progress. Table 4 describes the function of each bit in the software status register.
7
BPL
0
R/W
T4.6 539
Busy The Busy bit determines whether there is an internal Erase or Program operation in progress. A "1" for the Busy bit indicates the device is busy with an operation in progress. A "0" indicates the device is ready for the next valid operation. Write Enable Latch (WEL) The Write-Enable-Latch bit indicates the status of the internal memory Write Enable Latch. If the Write-Enable-Latch bit is set to "1", it indicates the device is Write enabled. If the bit is set to "0" (reset), it indicates the device is not Write enabled and does not accept any memory Write (Program/ Erase) commands. The Write-Enable-Latch bit is automatically reset under the following conditions: * * * * * * * Power-up Write-Disable (WRDI) instruction completion Byte-Program instruction completion Auto Address Increment (AAI) programming reached its highest memory address Sector-Erase instruction completion Block-Erase instruction completion Chip-Erase instruction completion
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit SPI Serial Flash SST25VF512 / SST25VF010 / SST25VF020 / SST25VF040
Advance Information Block Protection (BP1, BP0) The Block-Protection (BP1, BP0) bits define the size of the memory area, as defined in Table 5, to be software protected against any memory Write (Program or Erase) operations. The Write-Status-Register (WRSR) instruction is used to program the BP1 and BP0 bits as long as WP# is high or the Block-Protect-Lock (BPL) bit is 0. Chip-Erase can only be executed if Block-Protection bits are both 0. After power-up, BP1 and BP0 are set to 1. Block Protection Lock-Down (BPL) WP# pin driven low (VIL), enables the Block-ProtectionLock-Down (BPL) bit. When BPL is set to 1, it prevents any further alteration of the BPL, BP1, and BP0 bits. When the WP# pin is driven high (VIH), the BPL bit has no effect and its value is "Don't Care". After power-up, the BPL bit is reset to 0.
TABLE 5: SOFTWARE STATUS REGISTER BLOCK PROTECTION1
Status Register Bit Protection Level 0 1 (1/4 Memory Array) 2 (1/2 Memory Array) 3 (Full Memory Array) BP1 0 0 1 1 BP0 0 1 0 1 512 Kbit None 0C000H-0FFFFH 08000H-0FFFFH 00000H-0FFFFH
Protected Memory Area 1 Mbit None 018000H-01FFFFH 010000H-01FFFFH 000000H-01FFFFH 2 Mbit None 030000H-03FFFFH 020000H-03FFFFH 000000H-03FFFFH 4 Mbit None 060000H-07FFFFH 040000H-07FFFFH 000000H-07FFFFH
T5.3 539
1. Default at power-up for BP1 and BP0 is `11'.
Auto Address Increment (AAI) The Auto Address Increment Programming-Status bit provides status on whether the device is in AAI programming mode or Byte-Program mode. The default at power up is Byte-Program mode.
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit SPI Serial Flash SST25VF512 / SST25VF010 / SST25VF020 / SST25VF040
Advance Information
Instructions
Instructions are used to Read, Write (Erase and Program), and configure the SST25VFxxx. The instruction bus cycles are 8 bits each for commands (Op Code), data, and addresses. Prior to executing any Byte-Program, Auto Address Increment (AAI) programming, Sector-Erase, Block-Erase, or Chip-Erase instructions, the Write-Enable (WREN) instruction must be executed first. The complete list of the instructions is provided in Table 6. All instructions are synchronized off a high to low transition of CE#. Inputs will be accepted on the rising edge of SCK starting with the TABLE 6: DEVICE OPERATION INSTRUCTIONS1
Bus Cycle2 Cycle Read Sector-Erase5,6 Block-Erase5,7 Chip-Erase6 Byte-Program6 Auto Address Increment (AAI) Program6,8 Read-Status-Register (RDSR) Enable-Write-Status-Register (EWSR)10 Write-Status-Register (WRSR)10 Write-Enable (WREN) Write-Disable (WRDI) Read-ID Type/Operation3,4 SIN 03H 20H 52H 60H 02H AFH 05H 50H 01H 06H 04H 90H or ABH 1 SOUT Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z SIN A23-A16 A23-A16 A23-A16 A23-A16 A23-A16 X Data 00H 2 SOUT Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z DOUT Hi-Z Hi-Z SIN A15-A8 A15-A8 A15-A8 A15-A8 A15-A8 00H 3 SOUT Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Note9 Hi-Z SIN A7-A0 A7-A0 A7-A0 A7-A0 A7-A0 -. ID Addr11 4 SOUT Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Note9 Hi-Z SIN X DIN DIN X 5 SOUT DOUT Hi-Z Hi-Z Note9 DOUT12
T6.16 539
most significant bit. CE# must be driven low before a instruction is entered and must be driven high after the last bit of the instruction has been shifted in (except for Read, Read-ID and Read-Status-Register instructions). Any low to high transition on CE#, before receiving the last bit of a instruction bus cycle, will terminate the instruction in progress and return the device to the standby mode. Instruction commands (Op Code), addresses, and data are all input from the most significant bit (MSB) first.
1. AMS = Most Significant Address AMS = A15 for SST25VF512, A16 for SST25VF010, A17 for SST25VF020, A18 for SST25VF040 Address bits above the most significant bit of each density can be VIL or VIH 2. One bus cycle is eight clock periods. 3. Operation: SIN = Serial In, SOUT = Serial Out 4. X = Dummy Input Cycles (VIL or VIH); - = Non-Applicable Cycles (Cycles are not necessary) 5. Sector addresses: use AMS-A12, remaining addresses can be VIL or VIH 6. Prior to any Byte-Program, AAI-Program, Sector-Erase, Block-Erase, or Chip-Erase operation, the Write-Enable (WREN) instruction must be executed. 7. Block addresses for: use AMS-A15, remaining addresses can be VIL or VIH 8. To continue programming to the next sequential address location, enter the 8-bit command, AFH, followed by the data to be programmed. 9. The Read-Status-Register is continuous with ongoing clock cycles until terminated by a low to high transition on CE#. 10. The Enable-Write-Status-Register (EWSR) instruction and the Write-Status-Register (WRSR) instruction must work in conjunction of each other. The WRSR instruction must be executed immediately (very next bus cycle) after the EWSR instruction to make both instructions effective. 11. Manufacturer's ID is read with A0=0, and Device ID is read with A0=1. All other address bits are 00H. The Manufacturer's and Device ID output stream is continuous until terminated by a low to high transition on CE# 12. Device ID = 48H for SST25VF512, 49H for SST25VF010, 43H for SST25VF020, and 44H for SST25VF040
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit SPI Serial Flash SST25VF512 / SST25VF010 / SST25VF020 / SST25VF040
Advance Information Read The Read instruction outputs the data starting from the specified address location. The data output stream is continuous through all addresses until terminated by a low to high transition on CE#. The internal address pointer will automatically increment until the highest memory address is reached. Once the highest memory address is reached, the address pointer will automatically increment to the beginning (wrap-around) of the address space, i.e. for 4 Mbit density, once the data from address location 7FFFFH had been read, the next output will be from address location 00000H. The Read instruction is initiated by executing an 8-bit command, 03H, followed by address bits [A23-A0]. CE# must remain active low for the duration of the Read cycle. See Figure 4 for the Read sequence.
CE# MODE 3 SCK MODE 0 012345678 15 16 23 24 31 32 39 40 47 48 55 56 63 64 70
SI
03
ADD. HIGH IMPEDANCE
ADD.
ADD. N DOUT MSB N+1 DOUT N+2 DOUT N+3 DOUT N+4 DOUT
539 ILL F10.9
SO
FIGURE 4: READ SEQUENCE
Byte-Program The Byte-Program instruction programs the bits in the selected byte to the desired data. The selected byte must be in the erased state (FFH) when initiating a Program operation. A Byte-Program instruction applied to a protected memory area will be ignored. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain active low for the duration of the Byte-Program instruction. The ByteProgram instruction is initiated by executing an 8-bit command, 02H, followed by address bits [A23-A0]. Following the address, the data is input in order from MSB (bit 7) to LSB (bit 0). CE# must be driven high before the instruction is executed. The user may poll the Busy bit in the software status register or wait TBP for the completion of the internal self-timed Byte-Program operation. See Figure 5 for the Byte-Program sequence.
CE#
MODE 3
012345
678
15 16
23 24
31 32
39
SCK
MODE 0
SI SO
02
ADD.
ADD.
ADD.
DIN MSB LSB
HIGH IMPEDANCE
539 ILL F08.8
FIGURE 5: BYTE-PROGRAM SEQUENCE
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit SPI Serial Flash SST25VF512 / SST25VF010 / SST25VF020 / SST25VF040
Advance Information Auto Address Increment (AAI) Program The AAI program instruction allows multiple bytes of data to be programmed without re-issuing the next sequential address location. This feature decreases total programming time when the entire memory array is to be programmed. An AAI program instruction pointing to a protected memory area will be ignored. The selected address range must be in the erased state (FFH) when initiating an AAI program instruction. Prior to any write operation, the Write-Enable (WREN) instruction must be executed. The AAI program instruction is initiated by executing an 8-bit command, AFH, followed by address bits [A23-A0]. Following the addresses, the data is input sequentially from MSB (bit 7) to LSB (bit 0). CE# must be driven high before the AAI program instruction is executed. The user must poll the BUSY bit in the software status register or wait TBP for the completion of each internal self-timed Byte-Program cycle. Once the device completes programming byte, the next sequential address may be program, enter the 8-bit command, AFH, followed by the data to be programmed. When the last desired byte had been programmed, execute the Write-Disable (WRDI) instruction, 04H, to terminate AAI. See Figure 6 for AAI programming sequence. There is no wrap mode during AAI programming; once the highest unprotected memory address is reached, the device will exit AAI operation and reset the Write-EnableLatch bit (WEL = 0).
TBP CE# MODE 3 SCK MODE 0 012345678 15 16 23 24 31 32 33 34 35 36 37 38 39 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
TBP
SI
AF
A[23:16] A[15:8]
A[7:0] TBP
Data Byte 1
AF
Data Byte 2
CE# 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SCK 01234567
SI
AF
Last Data Byte
04 Write Disable (WRDI) Instruction to terminate AAI Operation
539 ILL F39.6
FIGURE 6: AUTO ADDRESS INCREMENT (AAI) PROGRAM SEQUENCE
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit SPI Serial Flash SST25VF512 / SST25VF010 / SST25VF020 / SST25VF040
Advance Information Sector-Erase The Sector-Erase instruction clears all bits in the selected 4 KByte sector to FFH. A Sector-Erase instruction applied to a protected memory area will be ignored. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain active low for the duration of the any command sequence. The Sector-Erase instruction is initiated by executing an 8-bit command, 20H, followed by address bits [A23-A0]. Address bits [AMS-A12] (AMS = Most Significant address) are used to determine the sector address (SAX), remaining address bits can be VIL or VIH. CE# must be driven high before the instruction is executed. The user may poll the Busy bit in the software status register or wait TSE for the completion of the internal selftimed Sector-Erase cycle. See Figure 7 for the SectorErase sequence.
CE#
MODE 3
012345
678
15 16
23 24
31
SCK
MODE 0
SI SO
20
ADD.
ADD.
ADD.
HIGH IMPEDANCE
539 ILL F06.10
FIGURE 7: SECTOR-ERASE SEQUENCE
Block-Erase The Block-Erase instruction clears all bits in the selected 32 KByte block to FFH. A Block-Erase instruction applied to a protected memory area will be ignored. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain active low for the duration of any command sequence. The Block-Erase instruction is initiated by executing an 8-bit command, 52H, followed by address bits [A23-A0]. Address bits [AMS-A16] (AMS = Most significant address) are used to determine block address (BAX), remaining address bits can be VIL or VIH. CE# must be driven high before the instruction is executed. The user may poll the Busy bit in the software status register or wait TBE for the completion of the internal self-timed BlockErase cycle. See Figure 8 for the Block-Erase sequence.
CE#
MODE 3
012345
678
15 16
23 24
31
SCK
MODE 0
SI SO
52
ADD.
ADD.
ADD.
HIGH IMPEDANCE
539 ILL F28.9
FIGURE 8: BLOCK-ERASE SEQUENCE
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit SPI Serial Flash SST25VF512 / SST25VF010 / SST25VF020 / SST25VF040
Advance Information Chip-Erase The Chip-Erase instruction clears all bits in the device to FFH. A Chip-Erase instruction will be ignored if any of the memory area is protected. Prior to any Write operation, the Write-Enable (WREN) instruction must be executed. CE# must remain active low for the duration of the Chip-Erase instruction sequence. The Chip-Erase instruction is initiated by executing an 8-bit command, 60H. CE# must be driven high before the instruction is executed. The user may poll the Busy bit in the software status register or wait TCE for the completion of the internal self-timed Chip-Erase cycle. See Figure 9 for the Chip-Erase sequence.
CE#
MODE 3
012345
67
SCK
MODE 0
SI SO
60 HIGH IMPEDANCE
539 ILL F07.9
FIGURE 9: CHIP-ERASE SEQUENCE
Read-Status-Register (RDSR) The Read-Status-Register (RDSR) instruction allows reading of the status register. The status register may be read at any time even during a Write (Program/Erase) operation. When a Write operation is in progress, the Busy bit may be checked before sending any new commands to assure that the new commands are properly received by the device. CE# must be driven low before the RDSR instruction is entered and remain low until the status data is read. ReadStatus-Register is continuous with ongoing clock cycles until it is terminated by a low to high transition of the CE#. See Figure 10 for the RDSR instruction sequence.
CE# MODE 3 SCK MODE 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
SI
05
HIGH-IMPEDANCE SO
7 MSB
6
5
4
3
2
1
0
STATUS REGISTER OUT
539 ILL F37.5
FIGURE 10: READ-STATUS-REGISTER (RDSR) SEQUENCE
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit SPI Serial Flash SST25VF512 / SST25VF010 / SST25VF020 / SST25VF040
Advance Information Write-Enable (WREN) The Write-Enable (WREN) instruction sets the WriteEnable-Latch bit to 1 allowing Write operations to occur. The WREN instruction must be executed prior to any Write (Program/Erase) operation. CE# must be driven high before the WREN instruction is executed.
CE# MODE 3 SCK MODE 0 01234567
SI SO
06 HIGH IMPEDANCE
539 ILL F35.3
FIGURE 11: WRITE ENABLE (WREN) SEQUENCE
Write-Disable (WRDI) The Write-Disable (WRDI) instruction resets the WriteEnable-Latch bit and AAI bit to 0 disabling any new Write operations from occurring. CE# must be driven high before the WRDI instruction is executed.
CE#
MODE 3
01234567
SCK
MODE 0
SI SO
04 HIGH IMPEDANCE
539 ILL F36.3
FIGURE 12: WRITE DISABLE (WRDI) SEQUENCE
Enable-Write-Status-Register (EWSR) The Enable-Write-Status-Register (EWSR) instruction arms the Write-Status-Register (WRSR) instruction and opens the status register for alteration. The Enable-WriteStatus-Register instruction does not have any effect and will be wasted, if it is not followed immediately by the Write(c)2002 Silicon Storage Technology, Inc.
Status-Register (WRSR) instruction. CE# must be driven low before the EWSR instruction is entered and must be driven high before the EWSR instruction is executed.
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit SPI Serial Flash SST25VF512 / SST25VF010 / SST25VF020 / SST25VF040
Advance Information Write-Status-Register (WRSR) The Write-Status-Register instruction works in conjunction with the Enable-Write-Status-Register (EWSR) instruction to write new values to the BP1, BP0, and BPL bits of the status register. The Write-Status-Register instruction must be executed immediately after the execution of the EnableWrite-Status-Register instruction (very next instruction bus cycle). This two-step instruction sequence of the EWSR instruction followed by the WRSR instruction works like SDP (software data protection) command structure which prevents any accidental alteration of the status register values. The Write-Status-Register instruction will be ignored when WP# is low and BPL bit is set to "1". When the WP# is low, the BPL bit can only be set from "0" to "1" to lockdown the status register, but cannot be reset from "1" to "0". When WP# is high, the lock-down function of the BPL bit is disabled and the BPL, BP0, and BP1 bits in the status register can all be changed. As long as BPL bit is set to 0 or WP# pin is driven high (VIH) prior to the low-to-high transition of the CE# pin at the end of the WRSR instruction, the BP0, BP1, and BPL bit in the status register can all be altered by the WRSR instruction. In this case, a single WRSR instruction can set the BPL bit to "1" to lock down the status register as well as altering the BP0 and BP1 bit at the same time. See Table 3 for a summary description of WP# and BPL functions. CE# must be driven low before the command sequence of the WRSR instruction is entered and driven high before the WRSR instruction is executed. See Figure 12 for EWSR and WRSR instruction sequences.
CE# MODE 3 SCK MODE 0 01234567 MODE 3 MODE 0 STATUS REGISTER IN 76543210 MSB SO HIGH IMPEDANCE
539 ILL F38.6
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
SI
50
01
FIGURE 13: ENABLE-WRITE-STATUS-REGISTER (EWSR)
AND
WRITE-STATUS-REGISTER (WRSR) SEQUENCE
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit SPI Serial Flash SST25VF512 / SST25VF010 / SST25VF020 / SST25VF040
Advance Information Read-ID The Read-ID instruction identifies the devices as SST25VFxxx and manufacturer as SST. The device information can be read from executing an 8-bit command, 90H or ABH, followed by address bits [A23-A0]. Following the Read-ID instruction, the manufacturer's ID is located in address 00000H and the device ID is located in address 00001H. Once the device is in Read-ID mode, the manufacturer's and device ID output data toggles between address 00000H and 00001H until terminated by a low to high transition on CE#.
CE# 012345 SCK 678 15 16 23 24 31 32 39 46 47 54 55 62 63
SI
90 or AB HIGH IMPEDANCE
00
00
ADD1 HIGH IMPEDANCE
SO
BF
Device ID
BF
Device ID
Note: The manufacturer's and device ID output stream is continuous until terminated by a low to high transition on CE#.
539 ILL F19.13
FIGURE 14: READ-ID SEQUENCE
(c)2002 Silicon Storage Technology, Inc.
S71192-02-000 4/02
539
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit SPI Serial Flash SST25VF512 / SST25VF010 / SST25VF020 / SST25VF040
Advance Information
ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55C to +125C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65C to +150C D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V Package Power Dissipation Capability (Ta = 25C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240C Output Short Circuit Current1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. Outputs shorted for no more than one second. No more than one output shorted at a time.
OPERATING RANGE:
Range Commercial Industrial Ambient Temp 0C to +70C -40C to +85C VDD 2.7-3.6V 2.7-3.6V
AC CONDITIONS
OF
TEST
Input Rise/Fall Time . . . . . . . . . . . . . . . 5 ns Output Load . . . . . . . . . . . . . . . . . . . . . CL = 30 pF See Figures 18 and 19
TABLE 7: DC OPERATING CHARACTERISTICS VDD = 2.7-3.6V
Limits Symbol IDDR IDDW ISB ILI ILO VIL VIH VOL VOH Parameter Read Current Program and Erase Current Standby Current Input Leakage Current Output Leakage Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage VDD-0.2 0.7 VDD 0.2 Min Max 10 30 15 1 1 0.8 Units mA mA A A A V V V V Test Conditions CE#=0.1 VDD/0.9 VDD@20 MHz, SO=open CE#=VDD CE#=VDD, VIN=VDD or VSS VIN=GND to VDD, VDD=VDD Max VOUT=GND to VDD, VDD=VDD Max VDD=VDD Min VDD=VDD Max IOL=100 A, VDD=VDD Min IOH=-100 A, VDD=VDD Min
T7.9 539
TABLE 8: CAPACITANCE
Parameter COUT CIN1
1
(Ta = 25C, f=1 Mhz, other pins open)
Description Output Pin Capacitance Input Capacitance
Test Condition VOUT = 0V VIN = 0V
Maximum 12 pF 6 pF
T8.0 539
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
(c)2002 Silicon Storage Technology, Inc.
S71192-02-000 4/02
539
16
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit SPI Serial Flash SST25VF512 / SST25VF010 / SST25VF020 / SST25VF040
Advance Information TABLE 9: RELIABILITY CHARACTERISTICS
Symbol NEND1 TDR1 ILTH1 Parameter Endurance Data Retention Latch Up Minimum Specification 10,000 100 100 + IDD Units Cycles Years mA Test Method JEDEC Standard A117 JEDEC Standard A103 JEDEC Standard 78
T9.1 539
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 10: AC OPERATING CHARACTERISTICS VDD = 2.7-3.6V
Limits Symbol FCLK TSCKH TSCKL TSCKR TSCKF TCES1 TCEH1 TCHS TCPH TCHZ TCLZ TDS TDH THLS THHS THLH THHH THZ TLZ TOH TV TSE TBE TSCE TBP
1. Relative to SCK.
1
Parameter Serial Clock Frequency Serial Clock High Time Serial Clock Low Time Serial Clock Rise Time Serial Clock Fall Time CE# Active Setup Time CE# Active Hold Time CE# Not Active Setup Time CE# Not Active Hold Time CE# High Time CE# High to High-Z Output SCK Low to Low-Z Output Data In Setup Time Data In Hold Time HOLD# Low Setup Time HOLD# High Setup Time HOLD# Low Hold Time HOLD# High Hold Time HOLD# Low to High-Z Output HOLD# High to Low-Z Output Output Hold from SCK Change Output Valid from SCK Sector-Erase Block-Erase Chip-Erase Byte-Program
Min 20 20
Max 20
Units MHz ns ns
5 5 15 10 10 10 100 20 0 5 5 10 10 15 10 20 20 0 20 25 25 100 20
ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms ms ms s
T10.13 539
TCHH1
(c)2002 Silicon Storage Technology, Inc.
S71192-02-000 4/02
539
17
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit SPI Serial Flash SST25VF512 / SST25VF010 / SST25VF020 / SST25VF040
Advance Information
TCPH CE# TCHH TCES SCK TDS TDH TSCKR TSCKF TCEH TCHS
SI
MSB
LSB
SO
HIGH-Z
HIGH-Z
539 ILL F41.6
FIGURE 15: SERIAL INPUT TIMING DIAGRAM
CE# TSCKH SCK TOH TCLZ SO TV SI
539 ILL F42.3
TSCKL
TCHZ LSB
MSB
FIGURE 16: SERIAL OUTPUT TIMING DIAGRAM
(c)2002 Silicon Storage Technology, Inc.
S71192-02-000 4/02
539
18
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit SPI Serial Flash SST25VF512 / SST25VF010 / SST25VF020 / SST25VF040
Advance Information
CE# THHH SCK THLH THZ SO TLZ THLS THHS
SI
HOLD#
539 ILL F43.1
FIGURE 17: HOLD TIMING DIAGRAM
(c)2002 Silicon Storage Technology, Inc.
S71192-02-000 4/02
539
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit SPI Serial Flash SST25VF512 / SST25VF010 / SST25VF020 / SST25VF040
Advance Information
VIHT INPUT VILT
539 ILL F02.0
VIT
REFERENCE POINTS
VOT
OUTPUT
AC test inputs are driven at VIHT (0.9 VDD) for a logic "1" and VILT (0.1 VDD) for a logic "0". Measurement reference points for inputs and outputs are VIT (0.5 VDD) and VOT (0.5 VDD). Input rise and fall times (10% 90%) are <5 ns.
Note: VIT - VINPUT Test VOT - VOUTPUT Test VIHT - VINPUT HIGH Test VILT - VINPUT LOW Test
FIGURE 18: AC INPUT/OUTPUT REFERENCE WAVEFORMS
TO TESTER
TO DUT CL
539 ILL F03.0
FIGURE 19: A TEST LOAD EXAMPLE
(c)2002 Silicon Storage Technology, Inc.
S71192-02-000 4/02
539
20
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit SPI Serial Flash SST25VF512 / SST25VF010 / SST25VF020 / SST25VF040
Advance Information
PRODUCT ORDERING INFORMATION
Device SST25VFxxx Speed - XXX Suffix1 XX Suffix2 XX Package Modifier A = 8 leads or contacts Package Type S = SOIC Q = WSON Temperature Range C = Commercial = 0C to +70C I = Industrial = -40C to +85C Minimum Endurance 4 = 10,000 cycles Operating Frequency 20 = 20 MHz Device Density 512 = 512 Kbit 010 = 1 Mbit 020 = 2 Mbit 040 = 4 Mbit Voltage V = 2.7-3.6V
Valid combinations for SST25VF512 SST25VF512-20-4C-SA SST25VF512-20-4C-QA
Valid combinations for SST25VF010 SST25VF010-20-4C-SA SST25VF010-20-4C-QA
Valid combinations for SST25VF020 SST25VF020-20-4C-SA SST25VF020-20-4C-QA
Valid combinations for SST25VF040 SST25VF040-20-4C-QA
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations.
(c)2002 Silicon Storage Technology, Inc.
S71192-02-000 4/02
539
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit SPI Serial Flash SST25VF512 / SST25VF010 / SST25VF020 / SST25VF040
Advance Information
PACKAGING DIAGRAMS
Pin #1 Identifier
Top View
Side View
7 4 places
5.0 4.8
0.51 0.33
1.27 BSC
End View
45 4.00 3.80 6.20 5.80 1.75 1.35 0.25 0.10 0.25 0.19 1.27 0.40 Note: 1. Complies with JEDEC publication 95 MS-012 AA dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in millimeters (max/min). 3. Coplanarity: 0.1 mm 08-soic-5x6-SA-7 4. Maximum allowable mold flash is 0.15 mm at the package ends and 0.25 mm between leads. 7 4 places
0 8
8-LEAD SMALL OUTLINE INTEGRATED CIRCUIT (SOIC) SST PACKAGE CODE: SA
(c)2002 Silicon Storage Technology, Inc.
S71192-02-000 4/02
539
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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit SPI Serial Flash SST25VF512 / SST25VF010 / SST25VF020 / SST25VF040
Advance Information
Top View
Pin #1 Corner
Side View
0.25 0.19
Bottom View
Pin #1
1.27 BSC
5.00 BSC 0.076
4.00
3.40 0.48 0.35 6.00 BSC 0.05 Max 0.8 0.7 0.75 0.50
Cross Section
0.8 0.7
Note: 1. All linear dimensions are in millimeters (max/min).
8-wson-5x6-QA-5
8-CONTACT ULTRA-THIN SMALL OUTLINE NO-LEAD (WSON) SST PACKAGE CODE: QA
(c)2002 Silicon Storage Technology, Inc.
S71192-02-000 4/02
539
23
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit SPI Serial Flash SST25VF512 / SST25VF010 / SST25VF020 / SST25VF040
Advance Information
Silicon Storage Technology, Inc. * 1171 Sonora Court * Sunnyvale, CA 94086 * Telephone 408-735-9110 * Fax 408-735-9036 www.SuperFlash.com or www.sst.com
(c)2002 Silicon Storage Technology, Inc. S71192-02-000 4/02 539
24

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